bc846 thru bc849 vishay semiconductors formerly general semiconductor document number 88164 www.vishay.com 09-may-02 1 small signal transistors (npn) maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit bc846 80 collector-base voltage bc847 v cbo 50 v bc848, bc849 30 bc846 80 collector-emitter voltage bc847 v ces 50 v bc848, bc849 30 bc846 65 collector-emitter voltage bc847 v ceo 45 v bc848, bc849 30 emitter-base voltage bc846, bc847 v ebo 6 v bc848, bc849 5 collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma peak emitter current i em 200 ma power dissipation at t sb = 50 cp tot 310 (1) mw thermal resistance junction to ambiant air r ja 450 (1) c/w thermal resistance junction to substrate backside r sb 320 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) device on fiberglass substrate, see layout on third page. 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features npn silicon epitaxial planar transistors for switching and af amplifier applications. especially suited for automatic insertion in thick and thin-film circuits. these transistors are subdivided into three groups (a, b, and c) according to their current gain. the type bc846 is available in groups a and b, however, the types bc847 and bc848 can be supplied in all three groups. the bc849 is a low noise type available in groups b and c. as complementary types, the pnp transistors bc856...bc859 are recommended. to-236ab (sot-23) mechanical data case: sot-23 plastic package weight: approx. 0.008g packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box dimensions in inches and (millimeters) mounting pad layout type marking bc846a 1a b1b bc847a 1e b1f c1g type marking bc848a 1j b1k c1l bc849b 2b c2c pin configuration 1 = base 2 = emitter 3 = collector
bc846 thru bc849 vishay semiconductors formerly general semiconductor www.vishay.com document number 88164 2 09-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit small signal current gain current gain group a v ce = 5v, i c = 2ma 220 bh fe f = 1khz 330 c 600 input impedance current gain group a v ce = 5v, i c = 2ma 1.6 2.7 4.5 bh ie f = 1khz 3.2 4.5 8.5 k ? c 6.0 8.7 15.0 output admittance current gain group a v ce = 5v, i c = 2ma 18 30 bh oe f = 1khz 30 60 s c 60 110 reverse voltage transfer ratio current gain group a v ce = 5 v, i c = 2ma 1.5 ? 10 -4 bh re f = 1khz 2 ? 10 -4 c 3 ? 10 -4 dc current gain current gain group a h fe v ce = 5v, i c = 10 a 90 b 150 c 270 current gain group a h fe v ce = 5v, i c = 2ma 110 180 220 b 200 290 450 c 420 520 800 collector saturation voltage v cesat i c = 10ma, i b = 0.5ma 90 250 mv i c = 100ma, i b = 5ma 200 600 base saturation voltage v besat i c = 10ma, i b = 0.5ma 700 mv i c = 100ma, i b = 5ma 900 base-emitter voltagev beon v ce = 5v, i c = 2ma 580 660 700 mv v ce = 5v, i c = 10ma 770 collector-base cutoff current i cbo v cb = 30v 15 na v cb = 30v, t j = 150 ? c 5 a gain-bandwidth product f t v ce = 5v, i c = 10ma 300 mhz f = 100mhz collector-base capacitance c cbo v cb = 10v, f = 1mhz 3.5 6 pf emitter-base capacitance c ebo v eb = 0.5v, f = 1mhz 9 pf bc846, bc847, bc848 v ce = 5v, i c = 200 a 210db noise figure bc849 f r g =2k ? , f = 1khz, ? f = 200 hz 1.2 4 db bc849 v ce = 5v, i c = 200 a 1.4 4 db r g =2k ? , f = 30...15000hz note: (1) device on fiberglass substrate, see layout on next page
bc846 thru bc849 vishay semiconductors formerly general semiconductor document number 88164 www.vishay.com 09-may-02 3 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches (millimeters) layout for r ja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm) admissible power dissipation versus temperature of substrate backside device on fiblerglass substrate, see layout pulse thermal resistance versus pulse duration (normalized) device on fiblerglass substrate, see layout dc current gain versus collector current collector-base cutoff current versus ambient temperature
bc846 thru bc849 vishay semiconductors formerly general semiconductor www.vishay.com document number 88164 4 09-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc846 thru bc849 vishay semiconductors formerly general semiconductor document number 88164 www.vishay.com 09-may-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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